2009. 2. 26 1/4 semiconductor technical data mje13005d triple diffused npn transistor revision no : 4 high voltage high speed power switch application. built-in free wheeling diode makes efficient anti saturation operation. suitable for half bridge light ballast applications. low base drive requirement. maximum rating (ta=25 ) 1. base 2. collector 3. emitter dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 123 123 electrical characteristics (ta=25 ) e c b equivalent circui t *pulse test : pulse width = 5ms, duty cycles 10% note : h fe classification r : 18~27, o : 23~35 characteristic symbol rating unit collector-base voltage v cbo 800 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 10 v collector current dc i c 5 a pulse i cp 10 base current i b 2 a collector power dissipation (tc=25 ) p c 75 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 10 a dc current gain h fe (1) v ce =5v, i c =1a 18 - 35 h fe (2) v ce =5v, i c =2a 8 - - collector-emitter saturation voltage v ce(sat) i c =1a, i b =0.2a - - 0.5 v i c =2a, i b =0.5a - - 0.6 i c =4a, i b =1a - - 1 base-emitter saturation voltage v be(sat) i c =1a, i b =0.2a - - 1.2 v i c =2a, i b =0.5a - - 1.6 collector output capacitance c ob v cb =10v, f=1mhz - 65 - pf transition frequency f t v ce =10v, i c =0.5a 4 - - mhz turn-on time t on i b1 150? b1 i cc v =300v i b2 i b2 300 s i b1 =0.4a, i b2 =-1a 2% output duty cycle input < = - - 0.15 s storage time t stg 2 - 5 s fall time t f - - 0.8 s diode forward voltage v f i f =2a - - 1.6 v *reverse recovery tims (di/dt=10a/ s) t rr i f =0.4a - 800 - ns i f =1a - 1.4 - s i f =2a - 1.9 - s
2009. 2. 26 2/4 mje13005d revision no : 4 collector current i c (a) collector-base voltage v cb (v) collector output capacitance collector-emitter saturation collector current i c (a) collector current i c (a) dc current gain h fe dc current gain h fe voltage v be(sat) ,v ce(sat) (v) fig 6. switching characteristic 1 switching time ( s) 0.1 0.01 0.1 10 collector current i c (a) 1 10 v cc =300v i c =5i b1 ,=-2.5i b2 t f t stg c ob (pf) common emitter fig 3. h fe - i c fig 4. c ob - v cb fig 2. v be(sat) ,v ce(sat) - i c 0.01 1 0.1 1 100 fig 1. h fe - i c 10 10 v ce =1v 0.01 1 0.1 1 100 10 10 v ce =5v collector emitter voltage v ce (v) collector current i c (a) fig 5. i c - v ce 0123456789 0 1 2 3 4 5 10 i b =0v 0.01 0.01 0.1 1 10 10 1 0.1 13 1 10 30 100 300 1 k 3 5 10 30 50 100 300 500 1k f=1mhz ta=25 c i c /i b =4 i b =500ma i b =400ma i b =300ma i b =200ma i b =100ma i b =50ma t a =125 c 25 c -20 c t a =125 c 25 c -20 c v ce (sat) v be (sat)
2009. 2. 26 3/4 mje13005d revision no : 4 0 collector power dissipation p c (w) 0 fig 10. p c - ta collector current i c (a) fig 9. safe operating area 25 50 75 100 125 150 175 200 20 40 60 80 100 tc=ta infinite heat sink 0.01 collector-emitter voltage v ce (v) 10 100 1000 0.1 1 10 100 ambient temperature ta ( c) forward current i f (a) reverse recovery time t rr ( s) forward diode current i f (a) forward diode voltage v f (v) fig 8. v f - i f 1.0 0.8 1.5 2.0 fig 7. t rr - i f 1.4 1.0 1.2 1.6 0.01 0.1 1 10 10 1 0.1 10 s 1 s 5ms 1ms dc collector current i c (pk) (a) fig 11. reverse biased safe operating area 0 1 collector-emitter clamp voltage v ce (v) 0 100 200 300 400 600 800 700 500 900 2 3 5 4 6 7 8 9 10 i b1 =2a v be (off)=-6.5v l=50 h v cc =20v
2009. 2. 26 4/4 mje13005d revision no : 4 i b1 v bb 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier r bb(2) - + i b v ce i c v clamp v cc l c (1) (3) t.u.t reverse biased safe operating area test circuits for inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the ba se to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage-current conditions during reverse biased turn-off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 11 gives the complete rbsoa characteristics.
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